Diamond thick film deposition in wafer scale using single-cathode direct current plasma assisted chemical vapour deposition

• Published in: Thin solid films Vol. 435; no. 1; pp. 89 - 94
• Main Authors: Lee, Wook-Seong, Baik, Young-Joon, Chae, Ki-Woong
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 01-07-2003; Elsevier Science
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; DC plasma; Diamond wafer; Exact sciences and technology; Large-area; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Physics of gases, plasmas and electric discharges; Physics of plasmas and electric discharges; Plasma applications; Uniformity; DC plasma; Large-area; Diamond wafer; Uniformity; Plasma physics; Synthetic mineral; Thick films; Diamonds; Operating mode; Crystal growth from vapors; Experimental study; CVD; Thickness; Direct current; Nonmetals; PECVD; Plasma stabilization
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/S0040-6090(03)00410-3

Deposition behavior of CVD diamond thick film by direct current (DC) plasma assisted chemical vapour deposition method was investigated on a wafer scale of 4 inches (10 cm) in diameter. A diode configuration with a cathode connected to the DC power supply and a grounded substrate was used, on which diamond was deposited. Plasma of methane and hydrogen mixed gas was generated at 150 Torr with the power up to 50 kW. Typically wafers showed a thickness gradient in a radial direction. A wafer bowing was also observed due to residual stress in the film. Both the thickness gradient and the bow could be minimized by process control. The physical properties such as Raman characteristic and thermal conductivity were very uniform. The average growth rate increased with methane concentration up to 19 μm/h, which could be increased further by increasing methane concentration and input power.