Electronic structure of Ge/Si self-assembled quantum dots with different shapes

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Vol. 89; no. 1; pp. 176 - 179
• Main Authors: Kim, J.Y., Seok, J.H.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 14-02-2002; Elsevier
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems; Electronic structure; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Ge quantum dot; Physics; Quantum dots; Valence force field; Ge quantum dot; Valence force field; Electronic structure; Diagonalization; Quantum dots; Self-assembled layers; Electronic density of states; Elastic deformation; Experimental study; Surface structure; Hamiltonians; Strain distribution; Germanium; Schroedinger equation; Silicon; Crystal morphology; Matrix elements
• ISSN: 0921-5107; 1873-4944
• DOI: 10.1016/S0921-5107(01)00838-8

Pyramid and hut shapes of self-assembled Ge quantum dots over a range of the lateral size of less than 500 Å and dome structures beyond the lateral size of 1000 Å are typically observed. We have investigated the electronic properties of approximate models of the pyramid and hut structures by taking the profiles of strain components into account. To obtain the elastic strain distribution, a valence force field model is used. The electronic confined state energies for electrons and holes are then obtained by diagonalizing the resultant Hamiltonian matrix of the Schrödinger equation based on strain-modified potential. Theoretical results are compared with the transition energies observed by photoluminescence spectroscopy.