A comprehensive structural analysis of relaxor ferroelectric Cr- and Ni-doped Sr0.61Ba0.39Nb2O6 crystals

A structural features, real compositions, and point defects of nominally pure and Cr- and Ni-doped Sr0.61Ba0.39Nb2O6 (SBN) crystals, which structure contains four chemically-different and ten crystallochemically-different atoms, have been determined using neutron, X-ray single crystal, X-ray powder,...

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Bibliographic Details
Published in:Journal of alloys and compounds Vol. 724; pp. 879 - 888
Main Authors: Kuz'micheva, Galina M., Kaurova, Irina A., Khramov, Evgeny V., Ivleva, Liudmila I., Chernyshev, Vladimir V., Rybakov, Victor B.
Format: Journal Article
Language:English
Published: Lausanne Elsevier B.V 15-11-2017
Elsevier BV
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Summary:A structural features, real compositions, and point defects of nominally pure and Cr- and Ni-doped Sr0.61Ba0.39Nb2O6 (SBN) crystals, which structure contains four chemically-different and ten crystallochemically-different atoms, have been determined using neutron, X-ray single crystal, X-ray powder, and X-ray synchrotron diffraction techniques, and EXAFS/XANES spectroscopy. The location of transition metal ions has been identified based on the analysis of electron (nuclear) density and confirmed by the EXAFS/XANES together with the definition of formal charges of Ni atoms in Ni-doped SBN crystals. The scope and application possibilities of diffraction methods and EXAFS/XANES spectroscopy for the determination of structural features and defect formation in functional bulk nominally-pure and Cr- and Ni-doped Sr0.61Ba0.39Nb2O6 single crystals is established. •Undoped SBN, SBN:Cr, and SBN:Ni crystals were grown by the Stepanov technique.•Crystal structure was refined by X-ray, neutron diffraction, synchrotron radiation.•The real compositions, point defects, and location of impurities were refined.•The presence of Ni2+ and Ni3+ ions in the vicinity of Nb1 site was found by EXAFS.•The limits of applicability of methods and techniques were determined.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2017.07.085