Hydrogen diffusion coefficient of silicon nitride thin films

• Published in: Applied surface science Vol. 201; no. 1; pp. 204 - 207
• Main Authors: Yu, George C., Yen, S.K.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 30-11-2002; Elsevier Science
• Subjects: Condensed matter: structure, mechanical and thermal properties; Diffusion; interface formation; Exact sciences and technology; Hydrogen diffusion; ISFET; Physics; Silicon nitride; Solid surfaces and solid-solid interfaces; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film; ISFET; Hydrogen diffusion; Silicon nitride; Thin film; Thin films; Electrochemical potential; pH value; Hydrogen; Ion sensitive field effect transistors; Silicon nitrides; Diffusion coefficient
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/S0169-4332(02)00934-0

Hydrogen concentration and diffusion in silicon nitride thin film is of significant interest because of its importance in barrier, sensor and catalytic coating applications. In this study, a novel method based on potential–pH response measurement was used to determine hydrogen diffusion in silicon nitride thin films. Hydrogen diffusion coefficient of silicon nitride films obtained from this method was 1×10
−19
cm
2/s. The unique feature of the potential–pH response method is its relatively simple experimental procedure, which eliminates complications arising from surface related effects and/or presence of hydrogen traps in the metal. The method also offers a considerable reduction in test time.