Ohmic contacts on diamond by B ion implantation and Ta–Au metallization

Ohmic contacts on diamond have been achieved by B ion implantation and subsequent metallization with a Ta/Au bilayer. The pre-treatment of p-diamond film using boiling aqua regia was effective in reducing oxygen, which plays an important role in forming the Au/Ta/p-diamond ohmic contacts. Sputter de...

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Bibliographic Details
Published in:Diamond and related materials Vol. 11; no. 9; pp. 1709 - 1712
Main Authors: Zhen, C.M, Wang, Y.Y, Guo, Q.F, Zhao, M, He, Z.W, Guo, Y.P
Format: Journal Article
Language:English
Published: Amsterdam Elsevier B.V 01-09-2002
Elsevier
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Summary:Ohmic contacts on diamond have been achieved by B ion implantation and subsequent metallization with a Ta/Au bilayer. The pre-treatment of p-diamond film using boiling aqua regia was effective in reducing oxygen, which plays an important role in forming the Au/Ta/p-diamond ohmic contacts. Sputter deposition and implantation accelerate the interfacial reaction between Ta and diamond film. The formation of TaC makes our contacts to be ohmic in the as-deposited state. Upon annealing, the quantity of TaC increases and it makes the ohmic behavior be improved.
ISSN:0925-9635
1879-0062
DOI:10.1016/S0925-9635(02)00144-9