Ohmic contacts on diamond by B ion implantation and Ta–Au metallization
Ohmic contacts on diamond have been achieved by B ion implantation and subsequent metallization with a Ta/Au bilayer. The pre-treatment of p-diamond film using boiling aqua regia was effective in reducing oxygen, which plays an important role in forming the Au/Ta/p-diamond ohmic contacts. Sputter de...
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Published in: | Diamond and related materials Vol. 11; no. 9; pp. 1709 - 1712 |
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Main Authors: | , , , , , |
Format: | Journal Article |
Language: | English |
Published: |
Amsterdam
Elsevier B.V
01-09-2002
Elsevier |
Subjects: | |
Online Access: | Get full text |
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Summary: | Ohmic contacts on diamond have been achieved by B ion implantation and subsequent metallization with a Ta/Au bilayer. The pre-treatment of p-diamond film using boiling aqua regia was effective in reducing oxygen, which plays an important role in forming the Au/Ta/p-diamond ohmic contacts. Sputter deposition and implantation accelerate the interfacial reaction between Ta and diamond film. The formation of TaC makes our contacts to be ohmic in the as-deposited state. Upon annealing, the quantity of TaC increases and it makes the ohmic behavior be improved. |
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ISSN: | 0925-9635 1879-0062 |
DOI: | 10.1016/S0925-9635(02)00144-9 |