Domain structures supported by micron-sized patterned Co/Cu multilayers with AF and FM coupling

• Published in: IEEE transactions on magnetics Vol. 34; no. 4; pp. 1012 - 1014
• Main Authors: Aitchison, P.R., Chapman, J.N., Kirk, K.J., Jardine, D.B., Evetts, J.E.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: New York, NY IEEE 01-07-1998; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Atomic force microscopy; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Interfacial magnetic properties (multilayers, magnetic quantum wells, superlattices, magnetic heterostructures); Magnetic domains; Magnetic films; Magnetic flux; Magnetic force microscopy; Magnetic multilayers; Magnetic properties and materials; Magnetic properties of surface, thin films and multilayers; Magnetic switching; Magnetization; Metals. Metallurgy; Nonhomogeneous media; Physics; Transmission electron microscopy; Multilayer; Antiferromagnetic materials; Experimental study; Cobalt; Switching; Lorentz electron microscopy; Thin films; Group IB metal; Domain structure; Transition elements; Magnetic domains; Magnetic structure; Copper; Exchange interactions
• ISSN: 0018-9464; 1941-0069
• DOI: 10.1109/20.706341

Micron-sized Co/Cu multilayer elements were prepared by dc magnetron sputtering and subsequent lift-off patterning. Two types of patterned multilayers, AF or PM coupled, were produced by controlling the width of the Cu spacer layers. Domain structures supported by these elements during magnetic switching have been imaged directly using the Lorentz imaging mode, differential phase contrast, in TEM. Patterning of the FM coupled multilayers introduces significant differences in the domain structures observed in the films as they adopt flux closure geometries in the remanent state. For AF-coupled multilayers little change occurs.