Electron-stimulated oxidation of silicon carbide

• Published in: Surface science Vol. 445; no. 2-3; pp. 159 - 166
• Main Authors: McDaniel, G.Y., Fenstermaker, S.T., Walker, D.E., Lampert, W.V., Mukhopadhyay, S.M., Holloway, P.H.
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 20-01-2000; Amsterdam Elsevier Science; New York, NY
• Subjects: Adsorption kinetics; Auger electron spectroscopy (AES); Carbon dioxide; Carbon monoxide; Chemistry; Exact sciences and technology; General and physical chemistry; Models of surface kinetics; Oxidation; Oxygen; Physical chemistry of induced reactions (with radiations, particles and ultrasonics); Silicon carbide; Solvated and trapped electrons; Oxygen; Silicon carbide; Auger electron spectroscopy (AES); Carbon dioxide; Adsorption kinetics; Models of surface kinetics; Oxidation; Carbon monoxide; Surface reaction; Electron beam; Experimental study; Auger electron spectrometry; Inorganic compound
• ISSN: 0039-6028; 1879-2758
• DOI: 10.1016/S0039-6028(99)01028-6

Auger Electron spectroscopy was used to study electron-stimulated oxidation (ESO) of SiC. The rate of oxidation was investigated as a function of electron-beam exposure (on and off), primary electron-beam energy (3–6keV), electron-beam current (25–500nA) and total chamber pressure. The oxidation rate correlated with overall chamber pressure rather than the partial pressure of H2O, CO or CO2 alone. The rate decreased as the primary-beam voltage Ep was increased. The oxidation rate increased as the primary-beam current was increased at higher pressures (2.2×10−7Torr). Oxidation did not occur in the absence of the electron beam.