FT IR spectroscopy of silicon oxide layers prepared with perchloric acid

► Formation of stoichiometric SiO2 layer with lowest density after chlorine oxidation ► KCN/HCN passivation contributes to formation of SiN, SiO and SiOH bonds at the expense of SiCl bonds. ► SiCN could not be identified due to overlapping of detected signal with absorption induced by CO2. Chlorine...

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Bibliographic Details
Published in:	Applied surface science Vol. 269; pp. 106 - 109
Main Authors:	Kopani, M., Mikula, M., Takahashi, M., Rusnák, J., Pinčík, E.
Format:	Journal Article
Language:	English
Published:	Amsterdam Elsevier B.V 15-03-2013 Elsevier
Subjects:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science; rheology Exact sciences and technology Infrared and Raman spectra Infrared and raman spectra and scattering Infrared spectroscopy KCN treatment Materials science Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Passivation Perchloric acid Physics Silicon oxide Surface treatments Silicon oxide Infrared spectroscopy KCN treatment Perchloric acid Passivation Inorganic compounds Chlorine Mechanical strength Minority carriers Infrared spectra Thickness Silicon oxides Carrier lifetime Capacitance Fourier transform spectra Oxidation Silicon X-ray photoelectron spectra
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