Electron capture properties of multi-DX levels in Si doped AlGaAs

• Published in: Solid state communications Vol. 101; no. 10; pp. 771 - 774
• Main Authors: Jia, Y.B., Grimmeiss, H.G.
• Format: Journal Article
• Language: English
• Published: Oxford Elsevier Ltd 01-03-1997; Elsevier
• Subjects: C. impurities in semiconductors; Charge carriers: generation, recombination, lifetime, and trapping; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Conductivity phenomena in semiconductors and insulators; D. electronic states (localized); D. photoconductivity and photovoltaics; Electron states; Electronic transport in condensed matter; Exact sciences and technology; Iii-v semiconductors; Impurity and defect levels; Photoconduction and photovoltaic effects; Photoconduction and photovoltaic effects; photodielectric effects; Physics; D. photoconductivity and photovoltaics; C. impurities in semiconductors; D. electronic states (localized); Aluminium arsenides; Gallium arsenides; Trapping; Inorganic compounds; Semiconductor materials; Transient photoconductivity; Ternary compounds; DLTS; Doped materials; Experimental study; Impurity states; Silicon additions
• ISSN: 0038-1098; 1879-2766
• DOI: 10.1016/S0038-1098(96)00695-3

Electron capture properties of DX centers in Si doped Al
0.3Ga
0.7As have been studied by analyzing the decay transients of photoconductivity. In contrast to majority-carrier pulse methods, these measurements allowed to study the capture rate over three orders of magnitude. Two distinct capture time constants were observed and are suggested to originate from two DX levels in the material. The capture barriers for the two DX levels are 365 meV and 424 meV, respectively.