2D irregular structure in the LED surface patterned by NSOM lithography

• Published in: Applied surface science Vol. 269; pp. 116 - 119
• Main Authors: Kubicova, Ivana, Pudis, Dusan, Skriniarova, Jaroslava, Kovac, Jaroslav, Jaroslav, Kovac, Jakabovic, Jan, Suslik, Lubos, Novak, Jozef, Kuzma, Anton
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15-03-2013; Elsevier
• Subjects: Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Electron, ion, and scanning probe microscopy; Electronics; Exact sciences and technology; Irregular structure; Light emitting diode; Light-emitting devices; Materials science; Near-field scanning optical microscope; NSOM lithography; Optoelectronic devices; Physics; Scanning probe microscopy: scanning tunneling, atomic force, scanning optical, magnetic force, etc; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Structure of solids and liquids; crystallography; Surface cleaning, etching, patterning; Surface treatments; NSOM lithography; Irregular structure; Near-field scanning optical microscope; Light emitting diode; Aluminium arsenides; Gallium arsenides; Patterning; Inorganic compounds; Semiconductor materials; Semiconductor devices; Lithography; Ternary compounds; Two dimensional structure; Binary compounds; Light emitting diodes; Illumination; Near-field scanning optical microscopy; Non contact measurement; Periodic structures
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2012.10.089

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► Effect of irregular structure surface on emission properties of the light emitting diode is investigated. ► NSOM lithography was used to pattern 2D irregular structure on the emitting surface of GaAs-based LED. ► Enhancement of radiation 1.2–1.5 times from the patterned air holes in comparison with the surrounding surface was proven.
This contribution presents near-field scanning optical microscope (NSOM) in illumination mode as effective tool for semiconductor device surface patterning. Though the effect of periodic structure application on the light emitting diode (LED) surface is well known, for the first time, the effect of irregular structure is investigated. The non-contact mode of the NSOM lithography was used to pattern two-dimensional irregular structure on the emitting surface of GaAs/AlGaAs-based LED. The structure was patterned in the upper confinement AlGaAs layer and the enhancement of radiation 1.2–1.5 times from the patterned air holes in comparison with the surrounding surface was proven, which is similar to the enhancement of light extraction efficiency published for periodic structure application.