Insitu CCVD grown bilayer graphene transistors for applications in nanoelectronics

• Published in: Applied surface science Vol. 291; pp. 83 - 86
• Main Authors: Wessely, Pia Juliane, Schwalke, Udo
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01-02-2014; Elsevier
• Subjects: Bilayer graphene; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Memory device; Physics; Transfer-free grown; Bilayer graphene; Transfer-free grown; Memory device; Memory devices; Transistors; Bilayers
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2013.09.142

•Bilayer graphene FETs suitable for applications in nanoelectronics.•Application as memory devices in nanoelectronics after appropriate downscaling.•Bilayer graphene FETs possess an extremely high on/off-current ratio of 1E4 up to 1E7.•Graphene devices for nanoelectronic applications in a hybrid silicon CMOS environment.
We invented a method to fabricate graphene field effect transistors (GFETs) on oxidized silicon wafers in a Silicon CMOS compatible process. The graphene layers needed are grown in situ by means of a transfer-free catalytic chemical vapor deposition (CCVD) process directly on silicon dioxide. Depending on the process parameters the fabrication of single, double or multi-layer graphene FETs (GFETs) is possible. The produced graphene layers have been characterized by SEM, TEM, TEM-lattice analysis as well as Raman-Spectroscopy. Directly after growth, the fabricated GFETs are electrically functional and can be electrically characterized via the catalyst metals which are used as contact electrodes. In contrast to monolayer graphene FETs, the fabricated bilayer graphene FETs (BiLGFETs) exhibit unipolar p-type MOSFET behavior. Furthermore, the on/off current-ratio of 104 up to several 107 at room temperature of the fabricated BiLGFETs allows their use in digital logic applications [1]. In addition, a stable hysteresis of the GFETs enables their use as memory devices without the need of storage capacitors and therefore very high memory device-densities are possible. The whole fabrication process is fully Si-CMOS compatible, enabling the use of hybrid silicon/graphene electronics.