PbSnTe:In compound: Electron capture levels, galvanomagnetic properties, and THz sensitivity

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 50; no. 12; pp. 1635 - 1640
• Main Authors: Ishchenko, D. V., Klimov, A. E., Shumsky, V. N., Epov, V. S.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01-12-2016; Springer; Springer Nature B.V
• Subjects: 2016; Analysis; Beta decay; Carrier density; CHARGE CARRIERS; COMPARATIVE EVALUATIONS; Current voltage characteristics; ELECTRIC CONDUCTIVITY; Electromagnetism; ELECTRON CAPTURE; Electrons; FERMI LEVEL; Freezing; INDIUM; INDIUM COMPOUNDS; LEAD COMPOUNDS; MAGNETIC FIELDS; Magnetic induction; Magnetic Materials; Magnetism; March 14–18; MATERIALS SCIENCE; Nizhny Novgorod; PHOTOCURRENTS; Photoelectric effect; Physics; Physics and Astronomy; RELAXATION; SENSITIVITY; SPACE CHARGE; TEMPERATURE DEPENDENCE; TIN TELLURIDES; Transient current; TRANSIENTS; XX International Symposium “Nanophysics and Nanoelectronics”
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782616120083

A model of the Pb
1–
x
Sn
x
Te:In compound, based on concepts of the theory of disordered systems is considered. The temperature dependences of the Fermi-level position and carrier concentration are calculated depending on the indium doping level and are compared with experimental data. The transient current–voltage characteristics are calculated in the mode of injection from the contact and current limitation by space charge at various voltage-variation rates. The data obtained are compared with the experiments. It is demonstrated that the shape of the characteristics is controlled by the parameters of electron capture at localized states. Photocurrent relaxation in a magnetic field is studied, and the mechanism of such relaxation is discussed under the assumption of the magnetic freezing of carriers.