Growth and structure of SrAl0.5Ta0.5O3:LaAlO3 solid solutions single crystals

• Published in: Journal of crystal growth Vol. 257; no. 1-2; pp. 146 - 152
• Main Authors: Berkowski, M., Fink-Finowicki, J., Diduszko, R., Byszewski, P., Aleksiyko, R., Kikalejshvili-Domukhovska, R.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01-09-2003; Elsevier
• Subjects: A1. Crystal structure; A1. Solid solutions; A2. Czochralski method; A2. Floating zone technique; A2. Single crystal growth; B1. Perovskites; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Growth from melts; zone melting and refining; Materials science; Methods of crystal growth; physics of crystal growth; Physics; 61.10.Nz; B1. Perovskites; A1. Solid solutions; 74.72; A1. Crystal structure; A2. Floating zone technique; A2. Single crystal growth; A2. Czochralski method; 81.10.Fq; 81.10.−h; Lanthanum oxides; Inorganic compounds; Chemical stability; Czochralski method; 74.72 A1. Crystal structure; Rare earth compounds; Thermal stability; 81.10.-h; Chemical composition; Aluminium oxides; Transition element compounds; Tantalum oxides; Perovskites; Floating zone; Experimental study; Strontium oxides; Monocrystals; Solid solutions; Crystal growth from melts
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(03)01414-3

Experiments on growth of (SrAl0.5Ta0.5O3)1−x(LaAlO3)x perovskite crystals by the Czochralski and floating zone methods in whole composition range are reported. The structure of these crystals was investigated by precise X-ray measurements at room and elevated temperatures. The experiments allowed us to propose a schematic phase diagram of this solution; solid solutions exist at a concentration of 0⩽x⩽0.5 when crystals assume a cubic structure. The Czochralski method may be used to grow single crystals with a composition x=0.23–0.41. Neither any structural phase transition nor tendency to form twins was detected in these solid solution crystals. The lattice parameters, thermal expansion coefficient and high melting point close to 1850°C indicate their high thermal and chemical stability and prove that these crystals may be used as substrates for high-temperature superconductor, manganites or GaN epitaxial layers.