Fluorene pendant-functionalization of poly(N-vinylcarbazole) as deep-blue fluorescent and host materials for polymer light-emitting diodes
π-Electron coupling of pendant conjugated segment in π-stacked semiconducting polymers always causes the formation of defect trapped sites and further quenched high-band excitons, which is harmful to the performance and stability of deep-blue polymer light-emitting diodes (PLEDs). Herein, considerat...
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Summary: | π-Electron coupling of pendant conjugated segment in π-stacked semiconducting polymers always causes the formation of defect trapped sites and further quenched high-band excitons, which is harmful to the performance and stability of deep-blue polymer light-emitting diodes (PLEDs). Herein, considerate of “defect” carbazole (Cz) electromers in poly(N-vinylcarbazole) (PVK), a series of fluorene units are introduced into pendant segments (PVCz-DMeF, PVCz-FMeNPh and PVCz-DFMeNPh) to suppress the strong π-electron coupling of pendant Cz units and enhance radiative transition toward fabricating sable PLEDs. Compared to PVCz-FMeNPh and PVCz-DFMeNPh, PVCz-DMeF spin-coated films show a relatively efficient deep-blue emission, completely similar to its single pendant chromophore, confirmed an extremely weak charge-transfer and electron coupling between adjacent pendant segments. Therefore, PLEDs based on PVCz-DMeF present stable and deep-blue emission with a high color purity (0.17, 0.08), associated with extremely weak defect emission at 600∼700 nm (induced by carbazole electromers). Finally, PLEDs based on PVCz-DMeF/F8BT blended films (1:1) also present the high maximum luminance (Lmax) of 6261 cd/m2 and current efficiency (CEmax) of 2.03 cd/A, confirmed slightly trapped sites formation. Therefore, precisely control the arrangement and packing model of pendant units in π-stacked polymer is an essential prerequisite for building efficient and stable emitter for optoelectronic devices.
The pendant steric functionalization of π-stacked semiconducting polymers is an effective strategy to precisely control their excitonic behavior and photophysical processing toward the optoelectronic devices.
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ISSN: | 1001-8417 1878-5964 |
DOI: | 10.1016/j.cclet.2022.108078 |