Fluence effect on photo- and electroluminescence of silica layers implanted with Sn+ ions

• Published in: Materials letters Vol. 308; p. 131070
• Main Authors: Romanov, I., Komarov, F., Parkhomenko, I., Vlasukova, L., Makhavikou, M., Milchanin, O., Wendler, E., van Vuuren, A., Neethling, J.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01-02-2022; Elsevier BV
• Subjects: Electroluminescence; Fluence; Ion implantation; Materials science; Nanocomposites; Nanocrystals; Photoluminescence; Silica layers; Silicon dioxide; Tin oxide; Electroluminescence; Nanocrystals; Silica layers; Tin oxide; Photoluminescence
• ISSN: 0167-577X; 1873-4979
• DOI: 10.1016/j.matlet.2021.131070

•Annealed Sn-implanted SiO2 films exhibit intense blue-violet electroluminescence.•Blue-violet emission intensity decreases with Sn concentration in SiO2 increase.•The effect of increasing blue-violet emission after charge passing was revealed.
High-fluence ion implantation has been applied to create silica-based light-emitting nanocomposite for silicon photonics. Samples of SiO2/Si have been implanted with Sn ions (80 keV, 2.5 × 1016 cm−2, 5 × 1016cm−2 and 1 × 1017 ion/cm2) and afterwards annealed at 900 °C for 60 min in air ambient. The intense violet band at 3.2 eV dominates in photoluminescence (PL) end electroluminescence (EL) spectra. Its intensity decreases with the Sn concentration increase in silica. Besides, the PL spectra exhibit orange band which quenches after passing a charge flow (0.35C/cm2) through the samples. The origin of the observed emission as well as its degradation mechanisms are discussed.