The influence of MoSe2 coated onto Pt film to DSSC performance with the structure TiO2/Dye/LxMoSe2Pt (0 ≤ x ≤ 5)

• Published in: Materials letters Vol. 275; p. 128076
• Main Authors: Ali Umar, Marjoni Imamora, Resti, Haris, Venny, Ali Umar, Akrajas
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15-09-2020; Elsevier BV
• Subjects: Counter-electrode; DSSC-performance; Dye-sensitized solar cells; Dyes; Liquid phase deposition; Liquid phases; Low resistance; LxMoSe2Pt; Materials science; Molybdenum compounds; Morphology; MoSe2; Photovoltaic cells; Platinum; Raman spectra; Semiconductors; Service life assessment; Titanium dioxide; Titanium oxides; DSSC-performance; Semiconductors; Counter-electrode; LxMoSe2Pt; MoSe2
• ISSN: 0167-577X; 1873-4979
• DOI: 10.1016/j.matlet.2020.128076

•The LPD has been successfully synthesized the asymmetrical Pt onto ITO substrate.•The DSSC performance increase with the number of MoSe2 coated to Pt film increased.•The DSSC with TiO2/Dye/L2MoSe2Pt have resulted in the best performance of 2.967%•The MoSe2 coated are successful catalyst to the Pt film.•The Bode graph shows the TiO2/Dye/L2MoSe2Pt show small device resistance.
Research on the influence of Molybdenum Diselenide (MoSe2) coating on platinum (Pt) to performing dye-sensitized solar cell (DSSC) with the structure of TiO2/Dye/LxMoSe2Pt, (0 ≤ x ≤ 5) is reported. The hydrothermal method has successfully synthesized the TiO2 film with square and porous morphology on the indium titanium oxide (ITO) surface. Four peaks of the Raman Scattering detected from the semiconductor confirm the formation of TiO2 film. The liquid-phase deposition (LPD) also successfully prepared the Pt film. Onto the prepared Pt, the MoSe2 was coated to produce LxMoSe2Pt (0 ≤ x ≤ 5) and then use them as the counter electrode (CE). The best DSSC devices with TiO2/Dye/L2MoSe2Pt structures have resulted in current–density, Voc, and solar cell performance of 11.204 mA/cm2, 0.66 V, and 2.967%, respectively. The Bode graph confirmed this device has the longest lifetime, proven by the highest peak rise in the lowest frequency. Besides, high-frequency also shows the device has low resistance, useful for accelerating the electrons flow and enhancing DSSC performance.