Third-order optical nonlinearity in molybdenum trioxide (MoO3)-doped vanadium pentaoxide (V2O5) thin films
The present work focuses on investigation of laser-induced third-order optical nonlinearity in molybdenum trioxide ( MoO 3 )-doped vanadium pentaoxide ( V 2 O 5 ) thin films. MoO 3 has been doped in V 2 O 5 at different concentrations and thin films ( MoO 3 : V 2 O 5 ) with varying thickness have be...
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Published in: | The European physical journal. D, Atomic, molecular, and optical physics Vol. 75; no. 9 |
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Main Authors: | , , , , , |
Format: | Journal Article |
Language: | English |
Published: |
Berlin/Heidelberg
Springer Berlin Heidelberg
01-09-2021
Springer Nature B.V |
Subjects: | |
Online Access: | Get full text |
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Summary: | The present work focuses on investigation of laser-induced third-order optical nonlinearity in molybdenum trioxide (
MoO
3
)-doped vanadium pentaoxide (
V
2
O
5
) thin films.
MoO
3
has been doped in
V
2
O
5
at different concentrations and thin films (
MoO
3
:
V
2
O
5
) with varying thickness have been deposited on glass substrate by standard thermal evaporation method. X-ray diffraction studies show that deposited films have orthorhombic structure and the lattice parameters change with amount of doping as well as with the thickness of the film. A Nd:YAG-pulsed laser beam having wavelength
∼
532nm has been used as excitation source. Intensity-dependent absorption coefficient (
β
), nonlinear refractive index (
n
2
) and cubic nonlinear susceptibility (
χ
3
) have been estimated using single-beam Z-scan technique. A concentration-dependent switching of optical nonlinearity has been observed occurring due to internal self-action effects. Optical limiting behavior has also been reported with limiting threshold (
T
L
). Existence of strong third-order optical nonlinear susceptibility
(
χ
3
) with quite low limiting threshold (
T
L
) for visible laser beam confirms that
MoO
3
:
V
2
O
5
thin films have a great potential for the applications in photonic devices. |
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ISSN: | 1434-6060 1434-6079 |
DOI: | 10.1140/epjd/s10053-021-00242-0 |