Characterization of deformed quantum dots by modeling single-electron-tunneling experiments

• Published in: Physica. E, Low-dimensional systems & nanostructures Vol. 26; no. 1; pp. 477 - 481
• Main Authors: Räsänen, E., Könemann, J., Haug, R.J., Puska, M.J., Nieminen, R.M.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01-02-2005; Elsevier
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electron transport; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in multilayers, nanoscale materials and structures; Exact sciences and technology; Physics; Quantum dots; Single-electron spectrum; 71.55.Eq; 73.63.Kv; Quantum dots; 73.21.La; 75.75. + a; Electron transport; Single-electron spectrum; Aluminium arsenides; Gallium arsenides; Inorganic compounds; Semiconductor materials; Ternary compounds; Magnetic field effects; Binary compounds; Resonant tunnelling; Optimization; Electronic structure; Impurities; Transport processes; 75.75.+a Quantum dots; Carrier mobility; Quantum theory
• ISSN: 1386-9477; 1873-1759
• DOI: 10.1016/j.physe.2004.08.086

We have analyzed a single-electron transport spectrum of a quantum dot formed in a GaAs/AlGaAs resonant tunneling device. The measured spectrum indicates a strong confining potential and the lack of circular symmetry. We model the quantum dot by applying a rounded parabolic potential and a negatively charged impurity, shifted laterally and vertically from the center of the dot. We analyze the physical conditions behind the optimized parameter values and consider also the structural properties of the corresponding single-electron states as a function of the magnetic field.