In-situ process for AlGaAs compound semiconductor : materials science and device fabrication

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Bibliographic Details
Published in:	Journal of electronic materials Vol. 23; no. 7; pp. 625 - 634
Main Authors:	HONG, M, CHOQUETTE, K. D, MANNAERTS, J. P, GROBER, L. H, FREUND, R. S, VAKHSHOORI, D, CHU, S. N. G, LUFTMAN, H. S, WETZEL, R. C
Format:	Conference Proceeding Journal Article
Language:	English
Published:	New York, NY Institute of Electrical and Electronics Engineers 01-07-1994
Subjects:	Applied sciences Cross-disciplinary physics: materials science; rheology Electronics Exact sciences and technology Fundamental areas of phenomenology (including applications) Lasers Lithography, masks and pattern transfer Materials science Methods of deposition of films and coatings; film growth and epitaxy Microelectronic fabrication (materials and surfaces technology) Molecular, atomic, ion, and chemical beam epitaxy Optics Optoelectronic devices Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor lasers; laser diodes Aluminium arsenides Surface cleaning Plasma Gallium arsenides Inorganic compounds Semiconductor materials Electron cyclotron-resonance Ternary compounds In-situ processing Binary compounds Etching Experimental study Laser diodes Contamination Vertical cavity laser Microelectronic fabrication Surface emitting laser Molecular beam epitaxy
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Summary:	Title describes article content.
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	0361-5235 1543-186X
DOI:	10.1007/BF02653348