Recessed source concept in nanoscale vertical surrounding gate (VSG) MOSFETs for controlling short-channel effects

• Published in: Physica. E, Low-dimensional systems & nanostructures Vol. 41; no. 4; pp. 671 - 676
• Main Authors: Subrahmanyam, B., Jagadesh Kumar, M.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01-02-2009; Elsevier
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Leakage current; Nanoscale MOSFET; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Short-channel effects; Simulation; Transistors; 85.30.Tv; Simulation; 85.40.−e; Short-channel effects; 85.40.Bh; Leakage current; Nanoscale MOSFET; 85.30.−z; Voltage threshold; MOSFET; 85.40.-e; Nanostructure; 85.30.-z
• ISSN: 1386-9477; 1873-1759
• DOI: 10.1016/j.physe.2008.11.007

In the recent past, vertical surrounding gate (VSG) MOSFETs have gained importance since defining their nanoscale channel length no longer depends on lithographic limitations and since they can lead to high packing densities. However, as the channel lengths decrease below 100
nm, VSG MOSFETs too suffer from short-channel effects due to the coupling between the drain and source side charges. In this paper, we demonstrate that using a recessed source, the short-channel effects in nanoscale VSG MOSFETs can be effectively controlled.