Improved Model for Excess Base Current in Irradiated Lateral p-n-p Bipolar Junction Transistors

An improved total ionizing dose model for lateral p-n-p bipolar junction transistors is described. The model captures the impact of charged defects on radiation-induced excess base current. Failure to incorporate this mechanism in model underestimates gain degradation.

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Bibliographic Details
Published in:	IEEE transactions on nuclear science Vol. 65; no. 8; pp. 1488 - 1495
Main Authors:	Tolleson, B. S., Adell, P. C., Rax, B., Barnaby, H. J., Privat, A., Han, X., Mahmud, A., Livingston, I.
Format:	Journal Article
Language:	English
Published:	New York IEEE 01-08-2018 The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:	Base current bipolar junction transistor (BJT) current gain Doping fixed positive oxide charge Integrated circuit modeling interface traps Ionizing radiation Junction transistors Junctions lateral p-n-p transistor (LPNP) Mathematical model Radiation Radiation effects recombination–generation Semiconductor devices Silicon surface-recombination velocity total ionizing dose (TID) Transistors
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Description
Summary:	An improved total ionizing dose model for lateral p-n-p bipolar junction transistors is described. The model captures the impact of charged defects on radiation-induced excess base current. Failure to incorporate this mechanism in model underestimates gain degradation.
ISSN:	0018-9499 1558-1578
DOI:	10.1109/TNS.2018.2829110