Photoluminescence in Chemical Vapor Deposited ZnS: insight into electronic defects

Photoluminescence in Chemical Vapor Deposited ZnS: insight into electronic defects

Photoluminescence spectra taken from chemical vapor deposited (CVD) ZnS are shown to exhibit sub-band-gap emission bands characteristic of isoelectronic oxygen defects. The emission spectra vary spatially with position and orientation with respect to the major axis of CVD growth. These data suggest...

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Bibliographic Details
Published in:Optical materials express Vol. 3; no. 9; pp. 1273 - 1278
Main Authors: McCloy, John S., Potter, Barrett G.
Format: Journal Article
Language:English
Published: 01-09-2013
Subjects:
Bands
Chemical vapor deposition
Defects
Deposition
Heterogeneity
Photoluminescence
Spectral emissivity
Zinc sulfides
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Summary:Photoluminescence spectra taken from chemical vapor deposited (CVD) ZnS are shown to exhibit sub-band-gap emission bands characteristic of isoelectronic oxygen defects. The emission spectra vary spatially with position and orientation with respect to the major axis of CVD growth. These data suggest that a complex set of defects exist in the band gap of CVD ZnS whose structural nature is highly dependent upon local deposition and growth conditions, contributing to inherent heterogeneity in optical behavior throughout the material.
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ISSN:2159-3930
2159-3930
DOI:10.1364/OME.3.001273