Optoelectronic Devices Based on Atomically Thin Transition Metal Dichalcogenides

• Published in: Applied sciences Vol. 6; no. 3; p. 78
• Main Authors: Pospischil, Andreas, Mueller, Thomas
• Format: Journal Article
• Language: English
• Published: MDPI AG 01-03-2016
• Subjects: 2D materials; optoelectronic devices; transition metal dichalcogenides
• ISSN: 2076-3417; 2076-3417
• DOI: 10.3390/app6030078

We review the application of atomically thin transition metal dichalcogenides in optoelectronic devices. First, a brief overview of the optical properties of two-dimensional layered semiconductors is given and the role of excitons and valley dichroism in these materials are discussed. The following sections review and compare different concepts of photodetecting and light emitting devices, nanoscale lasers, single photon emitters, valleytronics devices, as well as photovoltaic cells. Lateral and vertical device layouts and different operation mechanisms are compared. An insight into the emerging field of valley-based optoelectronics is given. We conclude with a critical evaluation of the research area, where we discuss potential future applications and remaining challenges.