Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates

• Published in: Journal of crystal growth Vol. 312; no. 11; pp. 1823 - 1827
• Main Authors: MAUDER, C, REUTERS, B, RAHIMZADEH KHOSHROO, L, RZHEUTSKII, M. V, LUTSENKO, E. V, YABLONSKII, G. P, WOITOK, J. F, HEUKEN, M, KALISCH, H, JANSEN, R. H
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier 15-05-2010
• Subjects: Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of crystal growth; physics of crystal growth; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Structure and morphology; thickness; Structure of solids and liquids; crystallography; Structure of specific crystalline solids; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation; Thin film structure and morphology; Vapor phase epitaxy; growth from vapor phase; Photoluminescence; Roughness; VPE; XRD; Gallium nitride; B2. Semiconducting III-V materials; Thin films; Rocking curve; Electron mobility; A3. Chemical vapour deposition processes; Crystal structure; Stacking faults; Critical value; Al. Defects; Plane defects; Extended defects; Layer thickness; III-V compound; CVD; Anisotropy; MOVPE method; Plane strain; Growth mechanism; Al. X-ray diffraction; Carrier density; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2010.03.010