Investigating Heavy-Ion Effects on 14-nm Process FinFETs: Displacement Damage Versus Total Ionizing Dose

• Published in: IEEE transactions on nuclear science Vol. 68; no. 5; pp. 724 - 732
• Main Authors: Esposito, Madeline G., Manuel, Jack E., Privat, Aymeric, Xiao, T. Patrick, Garland, Diana, Bielejec, Edward, Vizkelethy, Gyorgy, Dickerson, Jeramy, Brunhaver, John, Talin, A. Alec, Ashby, David, King, Michael P., Barnaby, Hugh, Mclain, Michael, Marinella, Matthew J.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-05-2021; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: 14-nm bulk FinFET; annealing; CAD; Cobalt; Cobalt 60; Computer aided design; cryogenic measurements; Degradation; device simulation modeling; displacement damage (DD); Electron beams; Elongation; FinFETs; Fluence; Gamma rays; Heavy ions; Ion irradiation; Ionization; Ions; Irradiation; Logic gates; Low temperature; mobility degradation; Proton beams; Protons; Radiation; Radiation damage; Silicon; Silvaco; Technology; technology computer-aided design (TCAD); Temperature dependence; total ionizing dose (TID); Traps; γ Radiation
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/TNS.2021.3072886

Bulk 14-nm FinFET technology was irradiated in a heavy-ion environment (42-MeV Si ions) to study the possibility of displacement damage (DD) in scaled technology devices, resulting in drive current degradation with increased cumulative fluence. These devices were also exposed to an electron beam, proton beam, and cobalt-60 source (gamma radiation) to further elucidate the physics of the device response. Annealing measurements show minimal to no "rebound" in the ON-state current back to its initial high value; however, the OFF-state current "rebound" was significant for gamma radiation environments. Low-temperature experiments of the heavy-ion-irradiated devices reveal increased defect concentration as the result for mobility degradation with increased fluence. Furthermore, the subthreshold slope (SS) temperature dependence uncovers a possible mechanism of increased defect bulk traps contributing to tunneling at low temperatures. Simulation work in Silvaco technology computer-aided design (TCAD) suggests that the increased OFF-state current is a total ionizing dose (TID) effect due to oxide traps in the shallow trench isolation (STI). The significant SS elongation and ON-state current degradation could only be produced when bulk traps in the channel were added. Heavy-ion irradiation on bulk 14-nm FinFETs was found to be a combination of TID and DD effects.