Low-frequency Noise in Vertical InAs/InGaAs Gate-all-around MOSFETs at 15 K for Cryogenic Applications

• Published in: IEEE electron device letters Vol. 43; no. 12; p. 1
• Main Authors: Ram, Mamidala Saketh, Svensson, Johannes, Skog, Sebastian, Johannesson, Sofie, Wernersson, Lars-Erik
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-12-2022; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: 1/<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">f -noise; Analog circuits; Condensed Matter Physics; Cryoforming; cryogenic; Cryogenic engineering; Cryogenic temperature; Cryogenics; Den kondenserade materiens fysik; Digital electronics; Fluctuations; Freezing; Fysik; gate-all-around MOSFET; III-V; InAs/InGaAs; Indium arsenides; Indium gallium arsenide; Indium gallium arsenides; LF noise; Logic gates; Low-frequency noise; MOSFET; MOSFETs; Nanowires; Natural Sciences; Naturvetenskap; Noise measurement; Physical Sciences; Reliability analysis; Temperature; vertical nanowire
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2022.3216022

Low-frequency noise (LFN), or 1/ f -noise, can be used effectively to evaluate device reliability which is a major concern in analog as well as digital circuits. In this work, we present 1/ f -noise characterization of vertical InAs/InGaAs gate-all-around (GAA) MOSFETs with a 70-nm gate length ( L G ) measured at cryogenic temperatures down to 15 K. The measurements at cryogenic temperatures reveal that the physical mechanism of 1/ f -noise changes from carrier number fluctuations at 300 K to mobility fluctuations at 15 K. We conclude that the channel conduction at 15 K is dominated by the nanowire core instead of the nanowire surface due to the effect of the border and interface traps freezing out. Vertical InAs/InGaAs GAA MOSFETs at 15 K, due to reduced surface scattering, exhibit a low value of Hooge parameter, α H ~ 5 × 10 -6 and also have a low input-referred gate voltage noise spectral density, S VG = 4.3 μV 2 μm 2 Hz -1 that are important for reliable cryogenic circuit applications.