In situ X-ray photoelectron spectroscopy characterization of Al2O3/InSb interface evolution from atomic layer deposition

• Published in: Applied surface science Vol. 258; no. 14; pp. 5522 - 5525
• Main Authors: Zhernokletov, D.M., Dong, H., Brennan, B., Kim, J., Wallace, R.M.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01-05-2012; Elsevier
• Subjects: Al2O3; ALD; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Half-cycle; High-k; InSb; Physics; ALD; Half-cycle; High-k; InSb; Al2O3; Aluminium oxide; Inorganic compounds; Semiconductor materials; Indium antimonides; In situ; Al; High-κ; X-ray photoelectron spectra; O
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2012.01.132

An in situ half-cycle atomic layer deposition/X-ray photoelectron spectroscopy (ALD/XPS) study was conducted in order to investigate the evolution of the Al2O3 dielectric interface with InSb(111)A surfaces after sulfur passivation. A thick sulfide layer was observed to form on the as-treated surfaces, with sulfur bonded to both In and Sb. Upon annealing at 300°C in the ALD reactor, the level of Sb bonded to sulfur and oxygen is below the XPS detection limit, while significant concentrations of indium oxide/sulfur states are detected. The “clean-up” of the surface oxides and sulfides by the ALD process is presented.