A Fast Simulation Tool for Silicon-Pad Detectors

A Fast Simulation Tool for Silicon-Pad Detectors

Several types of detectors are used to detect charged particles in nuclear and particle physics experiments. Because the semiconductor detector has superior spatial and kinematic resolutions as well as good response time than other types of detectors, it has become one of the most important detector...

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Bibliographic Details
Published in:Journal of the Korean Physical Society Vol. 77; no. 8; pp. 635 - 642
Main Authors: Kim, Beomkyu, Bok, Jeongsu, Cho, Jaeyoon, Kwon, Jiyeon, Lee, Hyungjun, Kweon, Minjung
Format: Journal Article
Language:English
Published: Seoul The Korean Physical Society 01-10-2020
Springer Nature B.V
한국물리학회
Subjects:
Charged particles
Detectors
Electric fields
Holes (electron deficiencies)
Mathematical and Computational Physics
Multigrid methods
Particle and Nuclear Physics
Particle physics
Physics
Physics and Astronomy
Response time
Semiconductor charged particle detectors
Sensors
Silicon devices
Simulation
Theoretical
물리학
Simulation
Garfield
LAMPS
Particle physics
RAON
Fast silicon device simulation
Silicon detector
Silvaco TCAD
Nuclear physics
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Summary:Several types of detectors are used to detect charged particles in nuclear and particle physics experiments. Because the semiconductor detector has superior spatial and kinematic resolutions as well as good response time than other types of detectors, it has become one of the most important detectors recently. When charged particles pass through the semiconductor detector, electron-hole pairs are formed inside the detector and move toward the electrode by the electric field inside the detector. At this time, the trajectory and the momentum can be determined through the generated current signal. In this study, we introduce an open-source application named Fast Silicon Device (FSD) Simulation that is developed for a fast simulation of a typical silicon semiconductor detector, such as a p-type pad on an n-type wafer with a reverse-bias voltage. Iterative and multi-grid methods are used to reduce the simulation time for calculating potential and electric field. Current signals produced by the simulation are compared with results obtained by Silvaco TCAD and Garfield++ simulations. The simulation program is based on the ROOT that has been developed by CERN.
ISSN:0374-4884
1976-8524
DOI:10.3938/jkps.77.635