Magnetoresistance of epitaxial SrRuO3 thin films on a flexible CoFe2O4-buffered mica substrate

• Published in: Current applied physics Vol. 34; pp. 71 - 75
• Main Authors: Kwak, Yeong Min, Oh, Kwang Lim, Ko, Young Joon, Park, Sang Hyeok, Ryu, Sangkyun, Kim, Mi Suk, Lee, Kyu-Tae, Lee, Minbaek, Jeen, Hyoungjeen, Jung, Jong Hoon
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-02-2022; 한국물리학회
• Subjects: Flexible SrRuO3 thin films; Magnetic domain rotation; Suppressed spin fluctuation; Two magnetoresistance (MR) peaks; 물리학; Magnetic domain rotation; Suppressed spin fluctuation; Two magnetoresistance (MR) peaks; Flexible SrRuO3 thin films
• ISSN: 1567-1739; 1878-1675
• DOI: 10.1016/j.cap.2021.12.005

We have investigated the magnetoresistance of epitaxial SrRuO3 (SRO) thin films on a flexible CoFe2O4 (CFO)-buffered mica substrate. High-resolution X-ray diffraction and transmission electron microscopy revealed that the SRO film could be epitaxially grown on a mica substrate with a 22-nm-thick CFO buffer layer. The epitaxial relationships were SRO [1–10] || CFO [1–10] || mica [010] and SRO [111] || CFO [111] || mica [001]. Epitaxial SRO thin films exhibited two magnetoresistance (MR) peaks; one peak occurred at a Curie temperature of 160 K (HT-MR) and the other at a low temperature of 40 K (LT-MR). The LT-MR increased more rapidly with an increase of the buffer layer thickness than the HT-MR. The LT-MR was similar for the two orthogonal current directions with respect to the magnetic field. We explained the HT-MR and LT-MR in terms of the suppression of spin fluctuations and the magnetic rotation of crystallographic domains, respectively.
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•Epitaxial growth of flexible SrRuO3 thin films on a CoFe2O4-buffered mica substrate.•Crucial role of buffer layer on the crystallinity and physical properties of thin films.•Clear two magnetoresistance peaks.•Suppressed spin fluctuations and rotation of crystallographic magnetic domains.