An innovative large scale integration of silicon nanowire-based field effect transistors

• Published in: Solid-state electronics Vol. 143; pp. 97 - 102
• Main Authors: Legallais, M., Nguyen, T.T.T., Mouis, M., Salem, B., Robin, E., Chenevier, P., Ternon, C.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01-05-2018; Elsevier
• Subjects: Field effect transistor; Integration; Morphological and electrical characterizations; Nanonet; Physics; Silicidation; Silicon nanowire; Field effect transistor; Morphological and electrical characterizations; Integration; Silicon nanowire; Silicidation; Nanonet
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2017.11.008

Since the early 2000s, silicon nanowire field effect transistors are emerging as ultrasensitive biosensors while offering label-free, portable and rapid detection. Nevertheless, their large scale production remains an ongoing challenge due to time consuming, complex and costly technology. In order to bypass these issues, we report here on the first integration of silicon nanowire networks, called nanonet, into long channel field effect transistors using standard microelectronic process. A special attention is paid to the silicidation of the contacts which involved a large number of SiNWs. The electrical characteristics of these FETs constituted by randomly oriented silicon nanowires are also studied. Compatible integration on the back-end of CMOS readout and promising electrical performances open new opportunities for sensing applications.