P-9: Study of the Origin of Major Donor States in Oxide Semiconductor

P-9: Study of the Origin of Major Donor States in Oxide Semiconductor

The investigation of donor states is an important issue for characteristics and reliability of FETs. We succeeded in identifying the origin of donor states of InGaZnO through experiments and calculations. In addition, the number of photomasks is reduced by applying this mechanism.

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Published in:SID International Symposium Digest of technical papers Vol. 45; no. 1; pp. 975 - 978
Main Authors: Oota, Masashi, Ishihara, Noritaka, Nakashima, Motoki, Kurosawa, Yoichi, Hirohashi, Takuya, Takahashi, Masahiro, Yamazaki, Shunpei, Obonai, Toshimitsu, Hosaka, Yasuharu, Koezuka, Junichi, Kanzaki, Yohsuke, Matsukizono, Hiroshi, Kaneko, Seiji, Matsuo, Takuya
Format: Journal Article
Language:English
Published: Campbell Blackwell Publishing Ltd 01-06-2014
Wiley Subscription Services, Inc
Subjects:
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Mathematical analysis
Origins
Oxides
Photomasks
Roads & highways
Semiconductors
Technical papers
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Abstract The investigation of donor states is an important issue for characteristics and reliability of FETs. We succeeded in identifying the origin of donor states of InGaZnO through experiments and calculations. In addition, the number of photomasks is reduced by applying this mechanism.
AbstractList The investigation of donor states is an important issue for characteristics and reliability of FETs. We succeeded in identifying the origin of donor states of InGaZnO through experiments and calculations. In addition, the number of photomasks is reduced by applying this mechanism.
Author Kurosawa, Yoichi
Obonai, Toshimitsu
Oota, Masashi
Ishihara, Noritaka
Hosaka, Yasuharu
Kaneko, Seiji
Nakashima, Motoki
Matsukizono, Hiroshi
Matsuo, Takuya
Koezuka, Junichi
Takahashi, Masahiro
Kanzaki, Yohsuke
Hirohashi, Takuya
Yamazaki, Shunpei
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  organization: Sharp Corporation, Nara, Japan
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  fullname: Matsuo, Takuya
  organization: Sharp Corporation, Nara, Japan
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10.1016/0022-4596(91)90304-Z
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10.1126/science.1083212
10.1103/PhysRevB.84.115205
10.1103/PhysRevB.48.13115
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Snippet The investigation of donor states is an important issue for characteristics and reliability of FETs. We succeeded in identifying the origin of donor states of...
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SubjectTerms Bills
Mathematical analysis
Origins
Oxides
Photomasks
Roads & highways
Semiconductors
Technical papers
Title P-9: Study of the Origin of Major Donor States in Oxide Semiconductor
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