P-9: Study of the Origin of Major Donor States in Oxide Semiconductor

The investigation of donor states is an important issue for characteristics and reliability of FETs. We succeeded in identifying the origin of donor states of InGaZnO through experiments and calculations. In addition, the number of photomasks is reduced by applying this mechanism.

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Bibliographic Details
Published in:	SID International Symposium Digest of technical papers Vol. 45; no. 1; pp. 975 - 978
Main Authors:	Oota, Masashi, Ishihara, Noritaka, Nakashima, Motoki, Kurosawa, Yoichi, Hirohashi, Takuya, Takahashi, Masahiro, Yamazaki, Shunpei, Obonai, Toshimitsu, Hosaka, Yasuharu, Koezuka, Junichi, Kanzaki, Yohsuke, Matsukizono, Hiroshi, Kaneko, Seiji, Matsuo, Takuya
Format:	Journal Article
Language:	English
Published:	Campbell Blackwell Publishing Ltd 01-06-2014 Wiley Subscription Services, Inc
Subjects:	Bills Mathematical analysis Origins Oxides Photomasks Roads & highways Semiconductors Technical papers
Online Access:	Get full text
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Description
Summary:	The investigation of donor states is an important issue for characteristics and reliability of FETs. We succeeded in identifying the origin of donor states of InGaZnO through experiments and calculations. In addition, the number of photomasks is reduced by applying this mechanism.
Bibliography:	ArticleID:SDTP00253 ark:/67375/WNG-CNP7MF01-T istex:F473752EE5E5BDB6D46B019AD74B7EC5AA5A5D41 ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23
ISSN:	0097-966X 2168-0159
DOI:	10.1002/j.2168-0159.2014.tb00253.x