Solar-blind AlxGa1−xN-based avalanche photodiodes
We report the Metalorganic Chemical Vapor Deposition (MOCVD) growth, fabrication, and characterization of solar blind AlxGa1−xN∕GaN-based avalanche photodiodes. The photocurrent voltage characteristics indicate a reproducible avalanche gain higher than 25 at a 72 V applied reverse bias. Under a 25 V...
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| Published in: | Applied physics letters Vol. 87; no. 22 |
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| Main Authors: | , , , , , |
| Format: | Journal Article |
| Language: | English |
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28-11-2005
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| Abstract | We report the Metalorganic Chemical Vapor Deposition (MOCVD) growth, fabrication, and characterization of solar blind AlxGa1−xN∕GaN-based avalanche photodiodes. The photocurrent voltage characteristics indicate a reproducible avalanche gain higher than 25 at a 72 V applied reverse bias. Under a 25 V reverse bias voltage, the 100 μm diameter devices had a maximum quantum efficiency of 55% and a peak responsivity of 0.11A∕W at 254 nm, and a NEP of 1.89x10−16 W∕Hz1∕2. |
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| AbstractList | We report the Metalorganic Chemical Vapor Deposition (MOCVD) growth, fabrication, and characterization of solar blind AlxGa1−xN∕GaN-based avalanche photodiodes. The photocurrent voltage characteristics indicate a reproducible avalanche gain higher than 25 at a 72 V applied reverse bias. Under a 25 V reverse bias voltage, the 100 μm diameter devices had a maximum quantum efficiency of 55% and a peak responsivity of 0.11A∕W at 254 nm, and a NEP of 1.89x10−16 W∕Hz1∕2. |
| Author | Tut, Turgut Gokkavas, Mutlu Yu, HongBo Butun, Serkan Butun, Bayram Ozbay, Ekmel |
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| CitedBy_id | crossref_primary_10_1063_1_2823588 crossref_primary_10_1063_5_0082348 crossref_primary_10_1007_s11664_006_0262_2 crossref_primary_10_1109_LPT_2007_906052 crossref_primary_10_1149_1_3447813 crossref_primary_10_1016_j_nima_2009_05_149 crossref_primary_10_7567_APEX_9_052103 crossref_primary_10_1007_s11082_014_0065_2 crossref_primary_10_1002_pssc_200778735 crossref_primary_10_1088_0022_3727_44_40_405102 crossref_primary_10_1364_PRJ_392041 crossref_primary_10_1364_AOP_10_000043 crossref_primary_10_1088_0022_3727_46_30_305105 crossref_primary_10_1109_TED_2020_3007363 crossref_primary_10_1002_pssr_201307085 crossref_primary_10_1063_1_2720712 crossref_primary_10_1049_el_20082830 crossref_primary_10_1109_JSEN_2010_2052799 crossref_primary_10_1364_OE_383693 crossref_primary_10_1002_pssc_200778704 crossref_primary_10_1007_s11664_020_07950_0 crossref_primary_10_1116_1_3159781 crossref_primary_10_1063_1_2724926 crossref_primary_10_1063_1_2385216 crossref_primary_10_1016_j_photonics_2007_05_001 |
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