Solar-blind AlxGa1−xN-based avalanche photodiodes

Solar-blind AlxGa1−xN-based avalanche photodiodes

We report the Metalorganic Chemical Vapor Deposition (MOCVD) growth, fabrication, and characterization of solar blind AlxGa1−xN∕GaN-based avalanche photodiodes. The photocurrent voltage characteristics indicate a reproducible avalanche gain higher than 25 at a 72 V applied reverse bias. Under a 25 V...

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Bibliographic Details
Published in:Applied physics letters Vol. 87; no. 22
Main Authors: Tut, Turgut, Butun, Serkan, Butun, Bayram, Gokkavas, Mutlu, Yu, HongBo, Ozbay, Ekmel
Format: Journal Article
Language:English
Published: 28-11-2005
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Summary:We report the Metalorganic Chemical Vapor Deposition (MOCVD) growth, fabrication, and characterization of solar blind AlxGa1−xN∕GaN-based avalanche photodiodes. The photocurrent voltage characteristics indicate a reproducible avalanche gain higher than 25 at a 72 V applied reverse bias. Under a 25 V reverse bias voltage, the 100 μm diameter devices had a maximum quantum efficiency of 55% and a peak responsivity of 0.11A∕W at 254 nm, and a NEP of 1.89x10−16 W∕Hz1∕2.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2135952