High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications

• Published in: Solid-state electronics Vol. 105; pp. 6 - 11
• Main Authors: Golshani, Negin, Derakhshandeh, Jaber, Beenakker, C.I.M., Ishihara, R.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01-03-2015
• Subjects: CVD; Deposition; Detectors; Drift; Electric potential; High-ohmic resistors; PureB; Resistors; Silicon; Silicon drift detectors; TCR; Tolerances; Voltage; Voltage dividers; CVD; TCR; PureB; High-ohmic resistors; Silicon drift detectors
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2014.11.022

•Fabrication of high-ohmic resistors using pure boron layer deposition.•Fabrication process is reproducible and IC compatible.•Resistors are reproducible, linear, bias-independent.•Resistors have low temperature coefficients low tolerances.•Resistors are integrated in the silicon drift detectors fabrication flow.
In this paper we report a novel process to fabricate high-ohmic resistors using pure boron (PureB) depositions to create a p-type conductive layer on n-type silicon substrate. Sheet resistance values in the 100kΩ/□ range are achieved using a reproducible and IC compatible process. The resistors made in this material are linear, bias-independent for the voltage ranges as high as 100V, low temperature coefficients of a few hundred ppm/°C and less than 1% tolerances. As an application, these resistors are integrated in the silicon drift detectors fabrication flow as voltage divider for the drift of electrons, successfully.