1-kV vertical Ga2O3 field-plated Schottky barrier diodes

1-kV vertical Ga2O3 field-plated Schottky barrier diodes

Ga2O3 field-plated Schottky barrier diodes (FP-SBDs) were fabricated on a Si-doped n−-Ga2O3 drift layer grown by halide vapor phase epitaxy on a Sn-doped n+-Ga2O3 (001) substrate. The specific on-resistance of the Ga2O3 FP-SBD was estimated to be 5.1 mΩ·cm2. Successful field-plate engineering result...

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Bibliographic Details
Published in:Applied physics letters Vol. 110; no. 10
Main Authors: Konishi, Keita, Goto, Ken, Murakami, Hisashi, Kumagai, Yoshinao, Kuramata, Akito, Yamakoshi, Shigenobu, Higashiwaki, Masataka
Format: Journal Article
Language:English
Published: 06-03-2017
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Summary:Ga2O3 field-plated Schottky barrier diodes (FP-SBDs) were fabricated on a Si-doped n−-Ga2O3 drift layer grown by halide vapor phase epitaxy on a Sn-doped n+-Ga2O3 (001) substrate. The specific on-resistance of the Ga2O3 FP-SBD was estimated to be 5.1 mΩ·cm2. Successful field-plate engineering resulted in a high breakdown voltage of 1076 V. A larger-than-expected effective barrier height of 1.46 eV, which was extracted from the temperature-dependent current–voltage characteristics, could be caused by the effect of fluorine atoms delivered in a hydrofluoric acid solution process.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4977857