Resistive switching in rectifying interfaces of metal-semiconductor-metal structures
We study the electrical characteristics of metal-semiconductor-metal HfO2−x-based devices where both metal-semiconductor interfaces present bipolar resistive switching. The device exhibits an unusual current-voltage hysteresis loop that arises from the non-trivial interplay of the switching interfac...
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| Published in: | Applied physics letters Vol. 103; no. 7 |
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| Main Authors: | , , , , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
12-08-2013
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| Online Access: | Get full text |
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| Summary: | We study the electrical characteristics of metal-semiconductor-metal HfO2−x-based devices where both metal-semiconductor interfaces present bipolar resistive switching. The device exhibits an unusual current-voltage hysteresis loop that arises from the non-trivial interplay of the switching interfaces. We propose an experimental method to disentangle the individual characteristics of each interface based on hysteresis switching loops. A mathematical framework based on simple assumptions allows us to rationalize the whole behavior of the device and reproduce the experimental current-voltage curves of devices with different metallic contacts. We show that each interface complementarily switches between a nonlinear metal-semiconductor interface and an ohmic contact. |
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| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.4818730 |