Electric-field-enhanced electron emission from the EL5 deep-level defect in GaAs

• Published in: Materials science in semiconductor processing Vol. 9; no. 1; pp. 351 - 354
• Main Authors: Tsarova, Tatsiana, Wosinski, Tadeusz, Makosa, Andrzej, Tkaczyk, Zbigniew
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Oxford Elsevier Ltd 01-02-2006; Elsevier Science
• Subjects: Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Deep levels; Electron and ion emission by liquids and solids; impact phenomena; Electron emission; Electronics; Exact sciences and technology; Field emission, ionization, evaporation, and desorption; Gallium arsenide; Impact phenomena (including electron spectra and sputtering); Lattice dynamics; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Vacuum microelectronics; 61.72.Ji; 71.55.Eq; Electron emission; Gallium arsenide; Deep levels; Defect states; Deep level transient spectrometry; Gallium arsenides; Crystallographic direction; Defect level; Crystal orientation; DLTS; Gallium arsenide; Deep levels; Electron emission; Field emission; Strong coupling; Crystal defect; Electron field emission; Inorganic compound; Electric field; Anisotropy; n type semiconductor; Divacancy; 71.55.Eq; 61.72.Ji; Electric field effect; Vibrational mode; Deep level; III-V semiconductors
• ISSN: 1369-8001; 1873-4081
• DOI: 10.1016/j.mssp.2006.01.015

Double-correlation deep-level transient spectroscopy has been used to study the electric-field-induced thermal emission of electrons from the EL5 defect in
n-type GaAs crystal. Strongly anisotropic electric-field enhancement of this emission, which was the largest for the electric field parallel to the 〈1
0
0〉 crystallographic direction and the smallest for the 〈1
1
1〉 configuration, points to the trigonal symmetry of the defect potential and a strong coupling of the defect to the lattice vibronic modes. In view of the revealed results it is argued that a close pair divacancy complex can be responsible for the EL5 defect.