Characterization of AlInAs/InGaAs High Electron Mobility Transistor Wafers Treated with Remote Phosphine Plasma

Surface modification of AlInAs/InGaAs high electron mobility transistor (HEMT) wafers has been investigated to suppress the diffusion of F atoms into an n-AlInAs layer. The surface of the HEMT wafer is phosphidized using remote phosphine (PH3) plasma. SIMS analysis reveals that F diffusion is suppre...

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Bibliographic Details

Published in:	Japanese Journal of Applied Physics Vol. 41; no. Part 1, No. 2B; pp. 1043 - 1047
Main Authors:	Yamamoto, Kensuke, Fujita, Norio, Nakajima, Shigeru, Sugino, Takashi
Format:	Journal Article
Language:	English
Published:	2002
Online Access:	Get full text
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