Characterization of AlInAs/InGaAs High Electron Mobility Transistor Wafers Treated with Remote Phosphine Plasma
Surface modification of AlInAs/InGaAs high electron mobility transistor (HEMT) wafers has been investigated to suppress the diffusion of F atoms into an n-AlInAs layer. The surface of the HEMT wafer is phosphidized using remote phosphine (PH3) plasma. SIMS analysis reveals that F diffusion is suppre...
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| Published in: | Japanese Journal of Applied Physics Vol. 41; no. Part 1, No. 2B; pp. 1043 - 1047 |
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| Main Authors: | , , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
2002
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| Online Access: | Get full text |
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| Summary: | Surface modification of AlInAs/InGaAs high electron mobility transistor (HEMT) wafers has been investigated to suppress the diffusion of F atoms into an n-AlInAs layer. The surface of the HEMT wafer is phosphidized using remote phosphine (PH3) plasma. SIMS analysis reveals that F diffusion is suppressed even after annealing at 400 C for 15 min for the phosphidized sample. Hall measurements show that no significant reduction in the 2-D electron density occurs due to annealing. Formation of the modification layer containing P atoms is shown by XPS analysis. PH3 plasma treatment is effective in suppressing the diffusion of F atoms into the n-AlInAs layer. 18 refs. |
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| Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
| ISSN: | 0021-4922 1347-4065 |
| DOI: | 10.1143/JJAP.41.1043 |