Nitride-based HFETs with carrier confinement layers

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Vol. 110; no. 2; pp. 172 - 176
• Main Authors: Su, Y.K, Chang, S.J, Kuan, T.M, Ko, C.H, Webb, J.B, Lan, W.H, Cherng, Y.T, Chen, S.C
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 15-07-2004
• Subjects: AFM; Carrier confinement; GaN; HFET; AFM; Carrier confinement; HFET; GaN
• ISSN: 0921-5107; 1873-4944
• DOI: 10.1016/j.mseb.2004.02.015

Nitride-based Al
0.24Ga
0.76N/GaN heterostructure field effect transistors (HFETs) with carrier confinement layers were successfully fabricated. It was found that the source–drain (S–D) leakage currents of the HFETs with carrier confinement layers were much smaller. It was also found that we could enhance the two dimensional electron gas (2DEG) carrier mobility from 1070 to 1180
cm
2/V/s by the insertion of a Mg-doped semi-insulating carrier confinement layer with a Cp
2Mg flow rate of 2.36×10
−8
mole/min. At the same time, we could also achieve a smoother sample surface. The dc and rf characteristics of these HFETs were also found to be good.