Resonant and voltage-tunable terahertz detection in InGaAs∕InP nanometer transistors

• Published in: Applied physics letters Vol. 89; no. 13; pp. 131926 - 1-3
• Main Authors: El Fatimy, A., Teppe, F., Dyakonova, N., Knap, W., Seliuta, D., Valušis, G., Shchepetov, A., Roelens, Y., Bollaert, S., Cappy, A., Rumyantsev, S.
• Format: Journal Article
• Language: English
• Published: American Institute of Physics 25-09-2006
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.2358816

The authors report on detection of terahertz radiation by high electron mobility nanometer InGaAs∕AlInAs transistors. The photovoltaic type of response was observed at the 1.8–3.1THz frequency range, which is far above the cutoff frequency of the transistors. The experiments were performed in the temperature range from 10to80K. The resonant response was observed and was found to be tunable by the gate voltage. The resonances were interpreted as plasma wave excitations in the gated two-dimensional electron gas. The minimum noise equivalent power was estimated, showing possible application of these transistors in sensing of terahertz radiation.