Analytical Modeling of IGBTs: Challenges and Solutions

Analytical Modeling of IGBTs: Challenges and Solutions

With the availability of advanced computing capability, it is fashionable to analyze and design insulated-gate bipolar transistors (IGBTs) using sophisticated 2-D and 3-D numerical simulation tools. However, analytical modeling of IGBTs allows a deeper understanding of the physics of operation, whic...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices Vol. 60; no. 2; pp. 535 - 543
Main Author: Baliga, B. J.
Format: Journal Article
Language:English
Published: IEEE 01-02-2013
Subjects:
Analytical models
Blocking
Buffer layers
Current density
Doping
Insulated gate bipolar transistors
insulated-gate bipolar transistor (IGBT)
Junctions
modeling
on state
safe operating area
silicon carbide
switching
Transistors
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:With the availability of advanced computing capability, it is fashionable to analyze and design insulated-gate bipolar transistors (IGBTs) using sophisticated 2-D and 3-D numerical simulation tools. However, analytical modeling of IGBTs allows a deeper understanding of the physics of operation, which can foster innovation. This paper reviews 1-D analytical models developed for the IGBT on-state characteristics, switching behavior, and safe operating area for symmetric (nonpunchthrough) and asymmetric (punchthrough) devices.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2012.2222415