Simple design for the transportation of ex situ prepared hydrogen passivated silicon

• Published in: Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vol. 20; no. 1; pp. 285 - 287
• Main Authors: MacLaren, D. A., Curson, N. J., Atkinson, P., Holst, B., Johnson, D. J., Allison, W.
• Format: Journal Article
• Language: English
• Published: 01-01-2002
• Subjects: Atomic force microscopy; Hydrogen; Oxidation; Passivation; Silicon; Surface phenomena; Water; Wetting; Si:H
• ISSN: 0734-2101; 1520-8559
• DOI: 10.1116/1.1419084

We present a design for a simple, reliable, and robust storage container suitable for the transportation of silicon crystals between clean room and experiment after hydrogen passivation by a “wet-chemical” process. The container stores the crystal in an inert atmosphere that is depleted of the water and oxygen responsible for surface oxidation. An atomic-force microscopy study of the surfaces of stored crystals confirmed that the storage method was successful and that surface oxidation can be impeded for at least 24 h. Our design is also suitable for the storage of other systems that degrade under atmospheric conditions.