High resolution inductively coupled plasma etching of 30 nm lines and spaces in tungsten and silicon

• Published in: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Vol. 18; no. 6; pp. 3471 - 3475
• Main Authors: Goodyear, Andrew L., Mackenzie, Sinclair, Olynick, Deirdre L., Anderson, Erik H.
• Format: Conference Proceeding Journal Article
• Language: English
• Published: 01-11-2000
• Subjects: Anisotropy; Aspect ratio; Dry etching; Semiconducting silicon; Tungsten; Si; W
• ISSN: 0734-211X; 1520-8567
• DOI: 10.1116/1.1326922

Dry etching of 30 nm features was investigated for x-ray and integrated electronics applications. These typically require etching of either a tungsten absorber layer or a silicon mold. Through the use of an inductively coupled plasma source and accurate control over substrate temperature it was possible to achieve highly anisotropic patterning of tungsten and silicon. Densely patterned features as small as 30 nm and at pitches of 70 nm were etched in tungsten and silicon, to depths of 100 and 200 nm, respectively.