Optical properties of Si-doped InAs/InP quantum dots

• Published in: Current applied physics Vol. 3; no. 5; pp. 465 - 468
• Main Authors: Hwang, Heedon, Park, Kwangmin, Kang, Jong-Hoon, Yoon, Sukho, Yoon, Euijoon
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-10-2003; 한국물리학회
• Subjects: Atomic force microscopy; Doping; Low dimensional structures; Metalorganic chemical vapor deposition; Photoluminescence; Semiconducting III–V materials; 물리학; Atomic force microscopy; 68.65.+g; Photoluminescence; Doping; Metalorganic chemical vapor deposition; 81.15.Gh; 61.72.Vv; Low dimensional structures; Semiconducting III–V materials
• ISSN: 1567-1739; 1878-1675
• DOI: 10.1016/j.cap.2002.11.002

InAs quantum dots (QDs) were grown on InP substrates by low pressure-metalorganic chemical vapor deposition. Disilane (Si
2H
6) was used as an n-type dopant. The positions of Si doping were varied: buffer layer, capping layer, modulation doping, and QD itself. Surface treatment of InP by Si
2H
6 was also performed to see the effect of Si on InAs QD. Photoluminescence (PL) and atomic force microscopy (AFM) were used to characterize optical and structural properties of QDs, respectively. It was found that the PL peak positions varied from 0.73 to 0.88 eV with the position of Si doping. PL peak blue shift in modulation doped sample was explained in terms of state filling effect. It was found that Si doping at QD itself was the most effective way to obtain the strongest integrated PL intensity without degrading the QD size distribution.