Single photon emission from InGaN/GaN quantum dots up to 50 K

We have investigated the optical properties of single InGaN quantum dots (QDs) by means of microphotoluminescence (μPL) spectroscopy. The QDs were grown on sapphire substrate using metal organic vapor phase epitaxy. Sharp and isolated single exciton emission lines in the blue spectral range were obs...

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Bibliographic Details
Published in:	Applied physics letters Vol. 100; no. 6
Main Authors:	Kremling, Stefan, Tessarek, Christian, Dartsch, Heiko, Figge, Stephan, Höfling, Sven, Worschech, Lukas, Kruse, Carsten, Hommel, Detlef, Forchel, Alfred
Format:	Journal Article
Language:	English
Published:	06-02-2012
Subjects:	Autocorrelation Excitation spectra Gallium nitrides Indium gallium nitrides Linear polarization Photon emission Quantum dots Sapphire
Online Access:	Get full text
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Summary:	We have investigated the optical properties of single InGaN quantum dots (QDs) by means of microphotoluminescence (μPL) spectroscopy. The QDs were grown on sapphire substrate using metal organic vapor phase epitaxy. Sharp and isolated single exciton emission lines in the blue spectral range were observed. The QD luminescence shows a strong degree of linear polarization up to 96% perpendicular to the growth axis (c-axis) with no preferential alignment in the xy plane. Second order autocorrelation measurements were performed under pulsed excitation and single photon emission up to 50 K is demonstrated.
Bibliography:	ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.3683521