Optical absorption enhancement in silicon nanowire arrays with a large lattice constant for photovoltaic applications

• Published in: Optics express Vol. 17; no. 22; pp. 19371 - 19381
• Main Authors: Lin, Chenxi, Povinelli, Michelle L
• Format: Journal Article
• Language: English
• Published: United States 26-10-2009
• Subjects: Electric Power Supplies; Equipment Design; Equipment Failure Analysis; Light; Nanostructures - chemistry; Nanostructures - ultrastructure; Refractometry - instrumentation; Scattering, Radiation; Silicon - chemistry; Solar Energy
• ISSN: 1094-4087; 1094-4087
• DOI: 10.1364/OE.17.019371

In this paper, we use the transfer matrix method to calculate the optical absorptance of vertically-aligned silicon nanowire (SiNW) arrays. For fixed filling ratio, significant optical absorption enhancement occurs when the lattice constant is increased from 100 nm to 600 nm. The enhancement arises from an increase in field concentration within the nanowire as well as excitation of guided resonance modes. We quantify the absorption enhancement in terms of ultimate efficiency. Results show that an optimized SiNW array with lattice constant of 600 nm and wire diameter of 540 nm has a 72.4% higher ultimate efficiency than a Si thin film of equal thickness. The enhancement effect can be maintained over a large range of incidence angles.