Silicon photodiodes with high photoconductive gain at room temperature

Silicon photodiodes with high photoconductive gain at room temperature

Silicon photodiodes with high photoconductive gain are demonstrated. The photodiodes are fabricated in a complementary metal-oxide-semiconductor (CMOS)-compatible process. The typical room temperature responsivity at 940 nm is >20 A/W and the dark current density is ≈ 100 nA/cm2 at 5 V reverse bi...

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Bibliographic Details
Published in:Optics express Vol. 20; no. 5; pp. 5518 - 5523
Main Authors: Li, X, Carey, J E, Sickler, J W, Pralle, M U, Palsule, C, Vineis, C J
Format: Journal Article
Language:English
Published: United States 27-02-2012
Subjects:
Amplifiers, Electronic
Equipment Design
Equipment Failure Analysis
Light
Photometry - instrumentation
Semiconductors
Silicon - chemistry
Temperature
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Summary:Silicon photodiodes with high photoconductive gain are demonstrated. The photodiodes are fabricated in a complementary metal-oxide-semiconductor (CMOS)-compatible process. The typical room temperature responsivity at 940 nm is >20 A/W and the dark current density is ≈ 100 nA/cm2 at 5 V reverse bias, yielding a detectivity of ≈ 10(14) Jones. These photodiodes are good candidates for applications that require high detection sensitivity and low bias operation.
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ISSN:1094-4087
1094-4087
DOI:10.1364/OE.20.005518