11 W single gain-chip dilute nitride disk laser emitting around 1180 nm

We report power scaling experiments of a GaInNAs/GaAs-based semiconductor disk laser operating at ~1180 nm. Using a single gain chip cooled to mount temperature of ~10 °C we obtained 11 W of output power. For efficient thermal management we used a water-cooled microchannel mount and an intracavity d...

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Bibliographic Details
Published in:	Optics express Vol. 18; no. 25; pp. 25633 - 25641
Main Authors:	Korpijärvi, Ville-Markus, Leinonen, Tomi, Puustinen, Janne, Härkönen, Antti, Guina, Mircea D
Format:	Journal Article
Language:	English
Published:	United States 06-12-2010
Subjects:	Arsenicals - chemistry Equipment Design Equipment Failure Analysis Gallium - chemistry Lasers, Semiconductor
Online Access:	Get full text
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Summary:	We report power scaling experiments of a GaInNAs/GaAs-based semiconductor disk laser operating at ~1180 nm. Using a single gain chip cooled to mount temperature of ~10 °C we obtained 11 W of output power. For efficient thermal management we used a water-cooled microchannel mount and an intracavity diamond heat spreader. Laser performance was studied using different spot sizes of the pump beam on the gain chip and different output couplers. Intracavity frequency-doubling experiments led to generation of ~6.2 W of laser radiation at ~590 nm, a wavelength relevant for the development of sodium laser guide stars.
Bibliography:	ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23
ISSN:	1094-4087 1094-4087
DOI:	10.1364/OE.18.025633